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Preliminary
Product Description
Sirenza Microdevice's CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. Amplifier Configuration
1 2 3 4 8 7 6 5
CGA-3318
Dual CATV Broadband High Linearity SiGe HBT Amplifier
Product Features * Excellent CSO/CTB/XMOD Performance at * *
+34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout 5 to 900 MHz operation
ELECTRICAL SPECIFICATIONS
Symbol G Parameter Small Si gnal Gai n *See 5-100 MHz Appli cati on C i rcui t, pg. 7. Output Second Order Intercept Poi nt Tone Spaci ng = 1 MHz, Pout per tone = +6 dBm Output Thi rd Order Intercept Poi nt Tone Spaci ng = 1 MHz, Pout per tone = +6 dBm Output Power at 1dB Gai n C ompressi on Input Return Loss Output Return Loss Noi se Fi gure Balun Inserti on Loss Included Worst C ase Over Band, 79 C h., Flat, +34dBmV Worst C ase Over Band, 79 C h., Flat, +34dBmV Worst C ase Over Band, 79 C h., Flat, +34dBmV D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (Juncti on to Lead)
Applications * CATV Head End Driver and Predriver Amplifier * Freq.(MHz ) Driver.Amplifier Max. Units CATV Line Min Typ.
*5 50 500 870 50 250 500 50 500 870 50 500 870 500 50-870 500 50-870 50 500 870 13.2 12.5 12.5 12.0 69.0 71.5 69.0 36.5 38.0 38.0 20.0 21.0 20.6 17.0 10 12.0 10 4.2 4.3 5.0 70 68 63 3.9 135 4.1 150 50
ZS = ZL = 75 Ohms
dB
10.0
OIP2
dB m
67.0
OIP3
dB m
36.0
P 1dB IRL ORL NF C SO C TB XMOD VD ID RTH(J-L)
dB m dB dB dB 6.0 dB c dB c dB c 4.3 165 V mA C /W
18.6
Test Conditions: VS = 8 V RBIAS = 51 Ohms
ID = 150 mA Typ. @ TL = 25C
Push Pull Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier
Absolute Maximum Ratings
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp.
Absolute Limit 225 mA 7V +18 dBm +150C -40C to +85C +150C
Typical RF Performance: VS=8V, ID=150mA @ TL=+25C, RBIAS=51 Ohms, Push-Pull Config.
16
G a in v s . F re q u e n c y
14
|S 21 | (dB)
12
10
8
-4 0 C + 25 C + 85 C
6 0 100 2 00 30 0 4 00 50 0 600 7 00 80 0 9 00 1 0 00
F r e qu e nc y (M H z)
0
Input Return L oss vs . F requency
0 -2
O u tp u t R e tu rn L o s s v s . F re q u e n c y
-40C + 25C + 85C
-5
-4 -6
-10
|S 22 | (dB)
-40C + 25C + 85C
|S 11 | (dB)
-8 -10 -12 -14 -16 -18 -20
-15
-20
-25
-30 0 100 200 300 400
F req u en cy (MH z )
500
600
700
800
900
1000
0
100
200
300
400
500
600
700
800
900
1000
Freque ncy (M Hz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance: VS=8V, ID=150mA @ TL=+25C, RBIAS=51 Ohms, Push-Pull Config.
50 45 40 35 30 25 20 0 0 .2 0 .4 0 .6 0 .8 1 -4 0 C 25C 85C
IP3 vs. Temperature
80 75 70 65 60 55 50
IP2 vs. Temperature
IP3 (dBm)
IP2 (dBm)
-4 0 C + 2 5C + 8 5C
Frequency (GHz) Second Harmonic vs. Pout and Freq. Data shown is typical at 25C
0
0 .2
0 .4
0 .6
0 .8
1
Frequency (GHz) Third Harmonic vs. Pout and Freq. Data shown is typical at 25C
100 90 80
100 90 80
IM2 (dBc)
60 50 40 30 20 0 3 6 9 12 15 66M H z 100M H z 250M H z 500M H z
IM3 (dBc)
70
70 60 50 40 30 20 0 3 6 9 12 15 66M H z 100M H z 250M H z 500M H z
Pout (dBm) Push-Pull CGA-3318 Noise Figure 50MHz-900MHz, Typical
Pout (dBm) Push-Pull CGA-3318 CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch.,Flat
CTB CSO+ CSOXmod
6 5 4
11 0 10 0 90 80
NF (dB)
3 2 1 0 0 200 400 600 800 1000
dBc
70 60 50 40 0 1 00 20 0 300 4 00 500 6 00
Frequency (MHz)
Frequency (MHz)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier CSO/CTB/XMOD Performance:
VS=8V, ID=150mA @ TL=+25C, RBIAS=51 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels.
Push-Pull CGA-3318 CTB vs. Pout and Freq.
100 32dBmV 90 36dBmV 40dBmV 80 34dBmV 38dBmV 42dBmV
80 90 100
Push-Pull CGA-3318 XMOD vs. Pout and Freq.
32dBmV 36dBmV 40dBmV 34dBmV 38dBmV 42dBmV
dBc
dBc
70
70
60
60
50
50
40 0 100 200
40
Frequency (MHz)
300
400
500
600
0
100
200
Frequency (MHz)
300
400
500
600
Push-Pull CGA-3318 CSO- vs. Pout and Freq.
100
100
Push-Pull CGA-3318 CSO+ vs. Pout and Freq.
90
90
80
80
dBc
dBc
32dBmV 34dBmV 38dBmV 42dBmV
70
70
60 36dBmV 40dBmV 40 0 100 200
60 32dBmV 50 36dBmV 40dBmV 40 34dBmV 38dBmV 42dBmV
50
Frequency (MHz)
300
400
500
600
0
100
200
Frequency (MHz)
300
400
500
600
Note: CSO measurements > 85 dBc can be limited by system noise.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier
Typical RF Performance - Single Ended - 50 Ohm System
VS=8V, ID=75mA (one amp biased), TL=+25C, RBIAS=51 Ohms
Gain & Isolation vs. Frequency
16 14 12 10
0 -4 -8
0 -5 -10
|S11| & |S22| vs. Frequency
Isolation (dB)
-12 -16 -20 -24 Gain (dB) -28 Isolation (dB) -32 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-15
Gain (dB)
dB
8 6 4 2 0
-20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S11| |S22|
Frequency (GHz)
Frequency (GHz)
Typical RF Performance - Single Ended - 37.5 Ohm System
VS=8V, ID=75mA (one amp biased), TL=+25C, RBIAS=51 Ohms
Gain & Isolation vs. Frequency
|S11| & |S22| vs. Frequency
16 14 12 10
0 -4 -8 -12 -16 -20 -24
0 -5 -10
Isolation (dB)
-15
Gain (dB)
8 6 4 Gain (dB) 2 Isolation (dB) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
dB
-20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
|S11| |S22|
-28 -32
Frequency (GHz)
Frequency (GHz)
50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier
Pin #
1 2,3 4
Function
RF IN Device 1 Ground RF IN Device 2
Description
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible.
1
Device Pin Out
8
Same as pin 1
2 7
5
RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor Device 2 should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. Ground Same as pins 2 and 3
3
6
6,7 8 EPAD
RF OUT / Vcc Same as pin 5 Device 1 Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5.
4
5
Basic Application Schematic 50-870 MHz
Vs
RBIAS 1F Tant. 0.01F 1000pF 68pF
Evaluation Board Layout 50-870 MHz
Rbias
1uF Tant. RF INPUT RF OUTPUT .01uF 1000pF 68pF 1000pF Balun ETC1-1-13
220 nH
1 8
Macom ETC1-1-13
Amp 1
1000 pF
2,3 6,7
1000 pF
Balun ETC1-1-13
1000pF
220nH
1000 pF
4 Amp 2 5
1000 pF
Macom ETC1-1-13
1000pF
220nH
1000pF 68pF 1000pF .01uF
CGA-3318 SOIC-08
1F Tant. 0.01F 1000pF 68pF
220 nH
1uF Tant.
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
Rbias
RBIAS
Vs
Part Number Ordering Information
Recommended Bias Resistor Values for ID=150mA Supply Voltage(VS) RBIAS RBIAS Power Rating 8V 51 1/2W 9V 62 1/2W 12V 100 1W 15V 150 1W
Part Number CGA-3318 Devices Per Reel 500 Reel Size 7"
2(VS-VD) RBIAS= ID
Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier 5 - 100 MHz Application Circuit: VS=8V, ID=150mA @ TL=+25C, Push-Pull Config.
16
G a in v s . F re q u e n c y
0
R eturn Lo ss vs. Frequ ency
14
-5
|S 11 | and |S 22 | (dB)
-10 |S 22 | -15
|S 21 | (dB)
12
10
-20 |S 11 | -25
8
6 0 10 20 30 40 50 60 70 80 90 100
-30 0 10 20 30 40 50 60 70 80 90 100
F re que nc y (M Hz )
F requency (M Hz)
40
8 7 6
22
P 1 d B a n d IP 3 v s . F r e q u e n c y
N o is e F ig ure v s. F re q uency
21
39
20
38
P1dB (dBm)
IP3 (dBm)
5
NF (dB)
19
37
4 3 2
18 P1dB IP3
36
17
35
1 0 0 10 20 30 40 50 60 70 80 90 100 110
16 0 10 20 30 40 50 60 70 80 90 100 110
34
F re qu e nc y (M H z )
F r e q u e n c y (M H z )
5-100 MHz Application Schematic
Vs
RBIAS 1F Tant. 0.01F 1000pF 68pF
5-100 MHz Evaluation Board Layout
Rbias
1uF Tant.
10
1 8
RF INPUT .01uF 1000pF 68pF 0.01uF Balun ETC1-1T
RF OUTPUT
Macom ETC1-1T
Amp 1
0.01 F
2,3 6,7
0.01 F
Balun ETC1-1T 0.01uF
10uH
0.01 F
4 Amp 2 5
0.01 F
Macom ETC1-1T
0.01uF
10uH
0.01uF 68pF 1000pF .01uF
CGA-3318 SOIC-08
1F Tant. 0.01F 1000pF 68pF
10
1uF Tant.
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
RBIAS
Rbias
Vs
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
http://www.sirenza.com
EDS-101993 Rev G
CGA-3318 Dual SiGe HBT Amplifier
PCB Pad Layout
Dimensions in inches [millimeters] Sized for 31 mil thick FR-4
Nominal Package Dimensions & Package Marking
Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances.
TOP VIEW
8 7 6 5
BOTTOM VIEW
Lot Code CGA3318
1 2 3 4
.155 [3.937]
.236 [5.994]
.112 [2.85]
.088 [2.25]
EXPOSED PAD .061 [1.549] .194 [4.93]
.050 [1.27]
.016 [.406] .061 [1.549]
.008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
DETAIL A
PARTING LINE
.194 [4.928] .003 [.076]
SEATING PLANE
SEE DETAIL A
.155 [3.937]
.025 5
SIDE VIEW
END VIEW
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 8
http://www.sirenza.com
EDS-101993 Rev G

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